Paper published in Proceedings
“An analytical model for polycrystalline thin film transistors”, K. Konwar, P. Gogoi and B. Baishya,;Proceedings of National Symposium on Instrumentation –30 (NSI-30), page 471-479, (2005).
Paper published in Journal
“A study of Ge-thin film transistors with rare earth oxides as gate insulators”,P. Gogoi, K. Konwar and B. Baishya; Indian Journal of Physics, vol. 80 (10), page 1021-1023, (2006).
“Effect of copper interlayer on thermally deposited polycrystalline Ge- thin film transistors fabricated on glass substrates”, P. Gogoi, K. Konwar and B. Baishya; Indian Journal of Physics, vol. 81 (5 & 6), page 567-572, (2007).
“Organic thin film transistors with dysprosium oxide” K. Konwar, P. Gogoi and B. Baishya, Acta Ciencia Indica, vol. XXXIII P. No. 3, page 321-324, (2007).
“Performance of thermally deposited polycrystalline Ge- thin film transistors with a copper interlayer fabricated on glass substrates”, P. Gogoi, K. Konwar and B. Baishya;Indian Journal of Physics, vol. 82 (5), page 577-583 (2008).
“Nepthacene and pentacene based organic thin film transistors with La2O3 as the gate insulator”, K. Konwar, P. Gogoi, and B. Baishya; Indian Journal of Physics, vol. 82 (5), (2008).
“Effect of working temperature on Ge-Nd2O3, Ge-Dy2O3, Ge-Eu2O3 and Ge-La2O3
TFTs’’, P. Gogoi, K. Konwar and B. Baishya, Optoelectronics and Advanced Materials
– Rapid Communications, Vol. 4, No. 5, p. 665 – 667, May (2010)
“Spectroscopic studies on Ag/PVA nanocomposite thin films prepared by thermal annealing process”, RajibSaikia, P. Gogoi, P. K. Baruah and PranayeeDatta; International Journal of Nanoscience, vol. 10, No. 3, page 427-432, (2011).
“Effect of Ag-doping on the electrical properties of thermally deposited CdS-La2O3 TFTs, P. Gogoi and R. Saikia; International Journal of Electronics, Vol. 99, (6), Page 869-876, (2012).
“Fabrication of Ag /PVA nanocomposites and their potential applicability as dielectric layer in thin film capacitor”, R. Saikia, P. Gogoi and P. Datta; Journal of Experimental Nanoscience, vol. 8 issue 2, page 194–202 (2013).
“Thermally deposited Ag-doped CdS TFTs with high – k rare-earth oxide Nd2O3 as gate dielectric”,P. Gogoi, Semiconductor, vol. 47, No. 3, page 341-344 (2013).
“ZnO TFTs prepared by chemical bath deposition technique with high-k La2O3 gate dielectric annealed in ambient atmosphere”, P. Gogoiet al., Phys. Status Solidi A, vol. 212, No. 4, page 826–830 (2015) / DOI 10.1002/pssa.201431605.
“Top gate ZnO–Al2O3 thin film transistors fabricated using a chemical bath deposition technique”, P. Gogoi., R. Saikia, and S. Changmai, Journal of Semiconductors, vol.36, No. 4, page 044002-1-4, (2015), DOI: 10.1088/1674-4926/36/4/044002.
“Plasmonic metal polymer nanocomposites for electronics and photonic applications”, R. Saikia, P. Gogoi, and D Saikia, Jof Frontline Research, vol. 4, page 53-59 (2015).
Sol-Gel Derived Dip Coated ZnO–La2O3 Thin Film Transistors, P Gogoi, R Saikia, UJ Mahanta, ECS Journal of Solid State Science and Technology 7 (11), Q206, (2018)
Oxygen annealed ZnO-La2O3 TFTs fabricated using CBD technique, P. Gogoi, R. Saikia and Utpal Jyoti Mahanta, Journal of Physics Conference Series IOP 1330 (1), 1-8 (2018).
Design optimization and fabrication of a wideband microwave absorber based on dual-phase dielectric semi-metallic nanocomposite, Journal of Physics and Chemistry of Solids, U J Mahanta, N S Bbhattacharya, I Hussain, P Gogoi and P J Gogoi Vol. 127, April 2019, P-202-212.
Design of Four Layer Microwave Absorber Based on Polyaniline-Expanded Graphite Composites: Role of Layer Interfaces in Impedance Matching, ECS Journal of Solid State Science and Technology, Utpal Jyoti Mahanta, Parag Jyoti Gogoi, Munu Borah, Abdul Hakim3, Karabi Gogoi and Jyoti Prasad Gogoi, Vol. 9, No. 10, (2020).
Large Capacitive Density in parallel Plate Nanocapacitors due to Coulomb Blockade Effect, R. Saikia and P Gogoi, International Journal Thin Film Science and Technology, 10 No. 2, 89-93 (2021).