Sibsagar College

Education

1. BSc in Phyics , Dibrugarh University, 2002

2. MSc in Phyics , Dibrugarh University, 2005

3. MPhill: Dibrugarh University, Title: NUCLEAR MATTER CALCULATION WITH PHENOMENOLOGICAL POTENTIAL, 2009

4. PhD: Dibrugarh University, Title: EFFECT OF CONTACT MATERIAL AND GATE DIELECTRIC ON THE PERFORMANCE OF PENTACENE BASED ORGANIC TFT, 2016

Professional Experience

March 2009-July 2011, Project Fellow, Jagannath Barooah College, Jorhat, Assam, India

September 2011-present, Assistant Professor, Sibsagar College, Joysagar, Sivasagar, Assam, India

Completed Research Project

Funded by University Grant Commission,New Delhi, India; Grant No: F.5-75/2013-14/(MRP/NERO)/300; Entitled “LOW THRESHOLD VOLTAGE ORGANIC TFT WITH HIGH DIELECTRIC CONSTANT RARE EARTH OXIDE Er2O3 , Nd2O3, La2O3 AS GATE INSULATORS: A COMPARATIVE STUDY” Status: Successfully Completed

Other responsibility

Professor In-charge of Volleyball

Jt. Convenor of Admission Committee Science Stream 2021

AOC, B.Sc. 1st sem. Examination 2012

AOC, B.Sc. 5th sem. Examination 2015

Asst. Zonal Officer of B.Sc. 2nd Sem Examination 2018

AOC , B.Sc. 5th sem. Examination 2019

Life Membership

Physics Academy of North East - PANE

Worked as a Reviewer for the following Journals

Physica Status Solidi A (Germany)-https://www.scopus.com/sourceid/5800179580

Physica Status Solidi (RRL) - Rapid Research Letters (Germany)-https://www.scopus.com/sourceid/10400153302

IEEE Transactions on Device and Materials Reliability (USA)-https://www.scopus.com/sourceid/26049

Subject Area: Special Relativity

1. AIP Advances 8, 085026 (2018); (Published by American Institute of Physics) ; ( Thomson reuters impact factor: 1.69 ; Scopus Indexed- https://www.scopus.com/sourceid/19900193962); Title of the paper: Lorentz gamma factor from vacuum to medium and Minkowski momentum of a photon; https://doi.org/10.1063/1.5043496; Read at: https://aip.scitation.org/doi/full/10.1063/1.5043496

Subject Area: Thin film device fabrication

1. IEEE Electron Device Letters 32 (2), 209-211(2011); (published by Institute of Electrical and Electronics Engineers, USA); (Thomson reuters impact factor : 4.8 ; Scopus Indexed-https://www.scopus.com/sourceid/26005); Tile of the paper: Low-Cost MoO3/Al Bilayer Electrode for Pentacene-Based OTFTs; DOI: 10.1109/LED.2010.2093502; Read at: https://ieeexplore.ieee.org/abstract/document/5671469

2. Phys. Status Solidi A, 210( 11)2391–2394 (2013);(Published by by Willy-VCH, Germany); ( Thomson reuters impact factor : 2.17; Scopus Indexed-https://www.scopus.com/sourceid/5800179580) Title of the paper: Enhancing air stability of pentacene-based OTFTs with pentacene double layer; https://doi.org/10.1002/pssa.201329243; Read at: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201329243

3. IEEE Trans. Dev. Mat. Rel. 16 (2), 272-274 (2016); (published by Institute of Electrical and Electronics Engineers, USA); (Thomson reuters impact factor : 1.9; Scopus Indexed-https://www.scopus.com/sourceid/26049) Title of the paper: Improved Pentacene Double-Layer Technique to Increase the Air Stability of Pentacene Based Organic Thin-Film Transistors; DOI: 10.1109/TDMR.2016.2565686; Read at: https://ieeexplore.ieee.org/abstract/document/7467491

4. Physica status solidi (a) 212 (4), 826-830 (2015);(Published by by Willy-VCH, Germany); ( Thomson reuters impact factor :2.17 ; Scopus Indexed-https://www.scopus.com/sourceid/5800179580) Title of the paper: ZnO TFTs prepared by chemical bath deposition technique with high‐k La2O3 gate dielectric annealed in ambient atmosphere; https://doi.org/10.1002/pssa.201431605; Read at: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201431605

5. Brazilian Journal of Physics 40 (3), 357-360 (2010);(published by Sociedade Brasileira de Física, Brazil); ( Thomson reuters impact factor :1.4; Scopus Indexed-https://www.scopus.com/sourceid/27404); Title of the paper: Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator; https://doi.org/10.1590/S0103-97332010000300019; Read at:https://www.scielo.br/j/bjp/a/g5Mnp6B7BWzJzKxNqfcX7cx/

6. Indian Journal of Physics 84 (5), 547-552(2010); (published by Indian Association for the Cultivation of Science, India); ( Thomson reuters impact factor :1.8; Scopus Indexed-https://www.scopus.com/sourceid/145208); Title of the paper: Pentacene thin film transistors using La2O3 as gate insulator; DOI:https://doi.org/10.1007/s12648-010-0045-8; Read at: https://link.springer.com/article/10.1007/s12648-010-0045-8

7. Indian Journal of Pure & Applied Physics, 47, 876-879 (2009);(Published by CSIR-National Institute of Science Communication and Policy Research, INDIA); ( Thomson reuters impact factor :0.85; Scopus Indexed-https://www.scopus.com/sourceid/28036) Title of the paper: Study of tetracene thin film transistors using La2O3 as gate insulator; Read at: http://nopr.niscair.res.in/handle/123456789/6609

8. Chiang Mai Journal of Science 39, 263-269 (2012);( Published by Chiang Mai University, Thailand); ( Thomson reuters impact factor :0.5; Scopus Indexed-https://www.scopus.com/sourceid/17800156707); Title of the paper: Low threshold voltage pentacene OTFTs with La2O3 gate insulating layer using TSD; Read at:https://epg.science.cmu.ac.th/ejournal/journal-detail.php?id=1065

9. Chiang Mai Journal of Science 38 (4), 653-657(2011);( Published by Chiang Mai University, Thailand); ( Thomson reuters impact factor :0.5; Scopus Indexed-https://www.scopus.com/sourceid/17800156707); Title of the paper:Low Threshold Voltage Pentacene OTFTs with O-2 Annealed Pr2O3 Gate Insulating Layer; Read at: https://epg.science.cmu.ac.th/ejournal/journal-detail.php?id=691

10. ECS Solid State Letters 4 (11), Q51 (2015) ;(published by Electrochemical Society, USA); (Scopus Indexed-https://www.scopus.com/sourceid/21100245721) Title of the paper: Organic TFTs Using Iodine Treated Pentacene Film with High-k Dielectric Nd2O3; Read at:https://iopscience.iop.org/article/10.1149/2.0021511ssl/meta

DR. DIPOK SAIKIA